Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

Development of bifacial n-type solar cells for industrial application

Fracture Strain of Lpcvd Polysilicon

A new polysilicon bridge-slider structure (Fig. 1), in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon. In the experiments, a mechanical probe is used to push against the plate end, compressing and forcing the bridge to buckle until it breaks. The distance...

Calcium contacts to n-type crystalline silicon solar cells

Direct metallization of lightly doped n-type crystalline silicon (c-Si) is known to routinely produce non-Ohmic (rectifying) contact behaviour. This has inhibited the development of n-type c-Si solar cells with partial rear contacts, an increasingly popular cell design for high performance p-type c-Si solar cells. In this contribution we demonstrate that low resistance Ohmic contact to n-type c...

extraction and characterization of allium irancum plant extract and its application in the green synthesis of silver nano particles and oxidation of thiocarbony1 compounds

سنتز سبز نانوذرات فلزی (nps) درسالهای اخیر توجه بسیارزیادی را به خود جلب کرده است. زیرا این پروتوکل کم هزینه وسازگار با محیط زیست از روش های استاندارد سنتز. در این پایان نامه ما گزارش میکنیم یک روش ساده و سازگار با محیط زیست برای سنتز نانوذرات نقره با استفاده از محلول آبی عصاره گیاه allium iranicum به عنوان یک عامل کاهش دهنده ی طبیعی. نانو ذرات نقره مشخص شد با استفاده از تکنیک های uv-visible، x...

IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of about 720 mV and 704 mV for n-type and p-type, respe...